磷化铟基光子集成电路先进外延生长博士项目

This PhD project investigates the epitaxial growth of InP-based materials like InGaAsP and InAlGaAs to optimize photonic integrated circuits (PICs). The research will explore growth limits using advanced reactors, correlate material properties with electro-optical performance, and develop predictive models to enhance yield and manufacturability.

Introduction: Photonic Integrated Circuits (PICs) are used more and more used to overcome data bottlenecks, offering massive improvements in energy efficiency and bandwidth and opening up new applications. They are critical to the scaling of modern data centers, telecommunications networks, and advanced sensing applications in healthcare, mobility, and agrifood. This PhD position is focusing on the foundation of the PIC: the epitaxial growth of the functional materials. These can be engineered to e.g. emit or amplify light, transport light on the chip of efficiently modulate the phase of the light. The project will encompass: Explore the limits of epitaxial growth for InP-based materials (InGaAsP and InAlGaAs) using a newest-generation Aixtron epi reactor Correlate epitaxial growth parameters to the electro-optical performance and reliability of active components such as lasers and amplifiers Investigate the science behind yield and manufacturability by developing predictive models to connect the physics and chemistry of Metal Organic Vapour Phase Epitaxy to successful large-scale integration of PICs Job Description: Photonic integrated circuits - or optical chips - have evolved into a mature technology with a broad spectrum of use cases and a diversity of building blocks. For Indium Phosphide (InP) platforms, active components like lasers and semiconductor optical amplifiers (SOAs) are the engines of these circuits. The foundation of the performance of these devices lies in the precision of the underlying material. As the industry pushes towards large-scale integration, mastering the material growth, understanding the limits of the process, and understanding the science underpinning yield learning and manufacturability becomes of crucial importance. We are seeking a PhD researcher to develop a deep understanding of the epitaxial growth of InP and its related compounds, specifically InGaAsP and InAlGaAs. Utilizing our state-of-the-art, newest-generation Aixtron epi reactor, you will explore the fundamental limits of the growth process. Your research will focus on optimizing material uniformity and directly correlating these foundational epitaxial properties to the final performance of (active and passive) photonic components. By mastering the growth phase, you will lay the groundwork for next-generation optical generation and amplification. Furthermore, a significant pillar of this project is the science behind yield. You will conduct rigorous data analysis to gain insights into device yield, developing a deep understanding of failure mechanisms and sources of defects to improve long-term reliability. By establishing predictive models and novel process methods, you will aim to increase the accuracy and repeatability of manufacturing. To achieve this, you will collaborate closely with commercial foundry partners, leveraging real-life fab data to support and validate your models. The position builds on the pioneering work in the foundry production of complex photonic integrated circuits in the JePPIX Pilot Line. The appointed person will work closely with a team of InP PIC technology experts inside the Photonic Integration Group and externally with integrated photonics researchers at our foundry partners.

职位要求： 材料科学、应用物理学、电气工程或类似领域的硕士学位 对半导体物理、晶体学及材料表征技术的认知与理解 对外延生长工艺（如 MOCVD/MOVPE）及复合半导体材料的相关知识有深入了解 能够分析大型数据集，以识别失效机制、缺陷来源，并深入了解器件良率 用于将材料特性与器件性能相关联的统计数据分析及模型技能 能够理解复杂的制造挑战，并提出创新的工艺方法以解决这些挑战 具备流利的英语口语和书面语能力（达到C1水平）。

就业条件： 在一所充满活力、志向远大的大学中，在跨学科环境和国际合作网络内从事有意义的工作。您将在美丽、绿意盎然的校园工作，校园距中央火车站仅需步行即可到达。此外，我们还为您提供： 全职聘用四年，并在入职九个月后进行中期考核。四年聘期内至少 10% 的工作时间用于教学任务，且每年的教学工作时间占比最高为 15%。 薪酬与福利（如养老金计划、带薪孕期假和产假、部分带薪育儿假）按照《荷兰大学集体劳动协议》的 P 级薪资标准执行（税前月基本工资最低为 € 3,204，最高为 € 4,051（全职））。 除基本工资外，您还将获得 8% 的假期津贴和 8.3% 的年终奖金，两者均以年度税前基本工资为计算基数。 充足的休假选择：每年标准休假为 29 天（按每周工作 38 小时计算）；每周多工作两小时，可将年休假增加至 41 天（弹性工作时间安排）。非全职工作者的休假天数按比例折算。 作为埃因霍芬理工大学 TU/e 的员工，您将参加 ABP 养老金计划，该计划提供退休养老金，以及遗属和职业失能相关的养老金保障。埃因霍芬理工大学 TU/e 承担养老金缴费的 70%，员工缴纳其余 30%。 提供优质培训项目及其他支持，帮助您成长为具有自我认知、能够独立开展工作的科研人员。在埃因霍芬理工大学 TU/e，我们鼓励您主动负责自己的学习过程。 完善的技术基础设施，以及校园内儿童托儿服务。 以极为优惠的费用，不限次数使用埃因霍芬理工大学 TU/e 校园内现代化的学生体育中心。 我们通过免费提供全天候 24/7 的 OpenUp 服务支持您的身心健康，为您及家人提供心理健康支持、专家指导和在线培训。 提供通勤、居家办公和上网费用补贴。 为国际申请者提供员工移民事务团队的支持及税收补偿方案（外籍人员方案）。 您可在我们的网站上进一步了解聘用条件。在埃因霍芬理工大学 TU/e 继续发展您的职业生涯！

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